1. Rt - 400C LT metallization
2. 800 - 1000C MT metallization
3. 1300 - 1600C HT metallization
4. 1900 - 2000C UHT metallization

The terminologies we use herein are IJ Research’s own trade marks.  We have noticed that one of our competitors copied ours as saying Medium Temperature metallization as an example.  The temperature ranges are approximates.

Aluminum Nitride and Others

IJ Research developed special metallization material designed for non-oxide ceramics such as AlN, Si3N4, BN, SiC, B4C and few others.

IJ Research’ metallization system for nitrides and carbides has been unique in terms of adhesion strength and long term hermeticity. It is designed based on a bonding mechanism of the unique metallization into the ceramic.

Unlikely BeO, it is not toxic and its chemical resistance is also high and is being used for both medical and non-medical fields. In various semiconductor applications, its thermal expansion is closely matched to many chip devices. Our current experience is with GaN, GaAs, SiC and of course with Si often times with one of the most powerful heat sink material carbon foam (Please see one article in Technology section, Thermal Management).

For microwave application, IJ Research brazes Alumina or AlN window to Cu flange for the hermetic applications.

IJ Research’s thin film deposition on AlN is very popular due to the high adhesion strength of the film

Should you have other ceramics not listed above, please contact sales@ijresearch.com for our suggestions.

Please click for a PDF copy of the brochure, Metallization.